Part Number Hot Search : 
DS324T9 7C010 150R1 3K74FKE BJ33CA FBR2510W MUR8100E 74HC59
Product Description
Full Text Search
 

To Download HMC260 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
Typical Applications
The HMC260 is ideal for: * Point to Point Radios * Point to Multi Point Radios
Features
Passive: No DC Bias Required Input IP3: +20 dBm LO/RF Isolation: 39 dB Small Size: 0.55mm2
Functional Diagram
General Description
The HMC260 is a passive double balanced mixer that can be used as an upconverter or downconverter between 14 and 26 GHz. The miniature monolithic mixer (MMIC) requires no external components or matching circuitry. The HMC260 provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The mixer operates with LO drive levels above +9 dBm. Measurements were made with the chip mounted and bonded into in a 50 ohm test fixture. Data includes the parasitic effects of wire bond assembly. Connections were made with a 3 mil ribbon bond with minimal length (<12 mil).
5
MIXERS - CHIP
Electrical Specifications, TA = +25 C
LO = +13 dBm, IF = 1 GHz Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 30 25 18 13 45 6 Typ. 14 - 26 DC - 8 7.5 7.5 39 35 25 20 55 11 10.5 10.5 Max. GHz GHz dB dB dB dB dB dBm dBm dBm Units
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
5 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
Conversion Gain vs. Temperature @ LO = +13 dBm
0
+ 25 C + 85 C - 55 C
Isolation @ LO = +13 dBm
0 -10
RF/IF LO/RF LO/IF
CONVERSION GAIN (dB)
-3
ISOLATION (dB)
-20 -30 -40 -50 -60
-6
-9
-12
-15 12 14 16 18 20 22 24 26 FREQUENCY (GHz)
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
5
MIXERS - CHIP
Conversion Gain vs. LO Drive
0
+ 9 dBm + 11 dBm + 13 dBm + 15 dBm
Return Loss @ LO = +13 dBm
0
CONVERSION GAIN (dB)
-3
-5
-6
RETURNLOSS (dB)
-10
-9
-15
-12
-20
LO RF
-15 12 14 16 18 20 22 24 26 FREQUENCY (GHz)
-25 12 14 16 18 20 22 24 26 FREQUENCY (GHz)
IF Bandwidth @ LO = +13 dBm
0
Upconverter Performance Conversion Gain @ LO = +13 dBm
0
-8
CONVERSION GAIN (dB)
10 12
-4
-4
RESPONSE (dB)
-8
-12
IF Return Loss Conversion Gain
-12
-16
-16
-20 0 2 4 6 8 FREQUENCY (GHz)
-20 12 14 16 18 20 22 24 26 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
5 - 45
MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
Input IP3 vs. LO Drive *
25
Input IP3 vs. Temperature @ LO = +13 dBm *
25
THIRD ORDER INTERCEPT (dBm)
20
THIRD ORDER INTERCEPT (dBm)
20
15
15
10
+ 11 dBm + 13 dBm + 15 dBm
10
+ 25 C + 85 C - 55 C
5
5
5
MIXERS - CHIP
SECOND ORDER INTERCEPT (dBm)
0 14 16 18 20 22 24 26 LO FREQUENCY (GHz)
0 14 16 18 20 22 24 26 LO FREQUENCY (GHz)
Input IP2 vs. LO Drive *
100 90 80 70 60 50 40 14 16 18 20 22 24 26 LO FREQUENCY (GHz)
+ 11 dBm + 13 dBm + 15 dBm
Input IP2 vs. Temperature @ LO = +13 dBm *
100
SECOND ORDER INTERCEPT (dBm)
90 80 70 60 50 40 14 16 18 20 22
+ 25 C + 85 C - 55 C
24
26
LO FREQUENCY (GHz)
Input P1dB vs. Temperature @ LO = +13 dBm
16
MxN Spurious Outputs
nLO mRF 0 xx 20 64 xx xx 1 9 0 72 92 xx 2 19 46 68 99 102 3 xx 37 82 83 >110 4 xx xx 95 94 >110
14
0
P1dB (dBm)
12
1 2
+ 25 C + 85 C - 55 C
10
3 4
8
6 14 15 16 17 18 19 20 21 22 23 24 25 26 FREQUENCY (GHz)
RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF output power level.
* Two-tone input power = -5 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
5 - 46
MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
Absolute Maximum Ratings
RF / IF Input LO Drive Storage Temperature Operating Temperature IF DC Current +15 dBm +27 dBm -65 to +150 C -55 to +85 C 4 mA
5
MIXERS - CHIP
5 - 47
Outline Drawing
(See Handling Mounting Bonding Note)
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006". 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
MIC Assembly Techniques
Ribbon Bond Ribbon Bond
5
MIXERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports.
5 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0301
HMC260
GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
5
MIXERS - CHIP
5 - 49
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 4060 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com


▲Up To Search▲   

 
Price & Availability of HMC260

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X